| Autor: |
Hara, Shiro, Suzuki, Kiyohisa, Furuya, Akira, Matsui, Youichi, Ueno, Tomo, Ohdomari, Iwao, Misawa, Shunji, Sakuma, Eiichiro, Yoshida, Sadafumi, Ueda, Yoshiya, Suzuki, Setsu |
| Zdroj: |
Japanese Journal of Applied Physics; March 1990, Vol. 29 Issue: 3 pL394-L394, 1p |
| Abstrakt: |
Mo/3C-SiC and Mo/6H-SiC interfaces have been investigated by Auger electron spectroscopy, Rutherford backscattering spectroscopy, X-ray diffraction, and transmission electron microscopy. High temperature annealing at 1200°C for 1 hour caused a reaction at the interfaces, resulting in forming a Mo2C/Mo5Si3/SiC multilayer. We have found that SiC poly-typism (3C or 6H) and Mo deposition process (evaporation or sputter deposition) make no influence in forming the multilayer. The diffusion mechanism at the Mo/SiC interface will be discussed. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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