| Autor: |
Harmand, Jean Christophe, Matsuno, Toshinobu, Inoue, Kaoru |
| Zdroj: |
Japanese Journal of Applied Physics; July 1989, Vol. 28 Issue: 7 pL1101-L1101, 1p |
| Abstrakt: |
We report on the lattice-mismatched growth of In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructures on GaAs substrates by molecular beam epitaxy. A buffer layer structure and its growth conditions were optimized. As a result, we obtained a sample with a mirrorlike surface which exhibits electron mobility of 10500 cm2/V·s and 48500 cm2/V·s at 300 K and 77 K, respectively. These values are comparable to those obtained in lattice-matched structures grown on InP substrates. To our knowledge, the room temperature mobility is the highest ever reported in a modulation-doped heterostructure grown on a GaAs substrate. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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