Characteristics of an ECR Plasma Sputtering Source at Low Ar/N2Gas Pressures for Thin Film Synthesis

Autor: Shoyama, Hiroaki, Mi\usina, Martin, Shoji Miyake, Shoji Miyake
Zdroj: Japanese Journal of Applied Physics; July 1997, Vol. 36 Issue: 7 p4583-4583, 1p
Abstrakt: The characterization of electron cyclotron resonance (ECR) plasma with a hollow cathode target for sputtering has been performed with a Langmuir probe. The experiments were carried out at low pressures below 1.2×10-3Pa at which high ionization rates over 10% were obtained. An ion current density up to 10 mA cm-2and a target current up to 700 mA were achieved when the input microwave power was 200 W. It was found that a negative bias applied to the target causes significant changes in the spatial distributions of electron density, electron temperature and plasma potential. When a negative bias over a certain value was applied, intense coherent temporal fluctuations in the ion saturation current were observed around the radial center of the plasma column.
Databáze: Supplemental Index