Ion Assisted Deposition of Crystalline TiNi Thin Films by Electron Cyclotron Resonance Plasma Enhanced Sputtering

Autor: Martin Misina, Martin Misina, Yuichi Setsuhara, Yuichi Setsuhara, Shoji Miyake, Shoji Miyake
Zdroj: Japanese Journal of Applied Physics; June 1997, Vol. 36 Issue: 6 p3629-3629, 1p
Abstrakt: Electron-cyclotron-resonance plasma enhanced sputtering with magnetic-mirror plasma confinement is characterized by low working pressures and large ion flux densities. TiNi thin films were deposited by this technique onto preheated Si (111) substrates. The crystal structure and composition of the films were analyzed by X-ray diffraction and Rutherford backscattering spectrometry, respectively. The substrate temperature Tcrnecessary for deposition of crystalline TiNi films was determined as a function of the ion-to-metal flux ratio jion/jTi+Niand ion energy Ei. Tcras low as 555 K was found for jion/jTi+Ni=3.9 and Ei=150 eV. Substrate temperatures higher than Tcrresulted in a textured crystal structure. Factors affecting the composition of the deposited thin films are also discussed.
Databáze: Supplemental Index