| Autor: |
Newbury, Richard, Taylor, Richard P., Sachrajda, Andrew S., Feng, Yan, Coleridge, Peter T., Fromhold, Carl Dettmann |
| Zdroj: |
Japanese Journal of Applied Physics; June 1997, Vol. 36 Issue: 6 p3991-3991, 1p |
| Abstrakt: |
We have investigated the geometry-induced magnetoresistance (MR) observed in a high mobility AlGaAs/GaAs electron billiard device. Our billiard is shaped by a surface gate arrangement incorporating a `bridging interconnect' fabrication technique which allows independent control of the cavity's central circular antidot and evolution from a regular square to a nominally chaotic environment in a single device. The low field MR signature of the device displays a marked fractal form with MR structure on a magnetic field scale much finer than that previously reported for generically similar electron-wave billiards. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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