| Autor: |
Shigeo Ibuka, Shigeo Ibuka, Michio Tajima, Michio Tajima, Hiroshi Takeno, Hiroshi Takeno, Masatoshi Warashina, Masatoshi Warashina, Takao Abe, Takao Abe, Keigo Nagasaka, Keigo Nagasaka |
| Zdroj: |
Japanese Journal of Applied Physics; April 1997, Vol. 36 Issue: 4 pL494-L494, 1p |
| Abstrakt: |
Isothermal annealing at 450°C for more than 100 h was performed for Czochralski-grown silicon crystals. We detected a photoluminescence (PL) band at around 0.86 eV at room temperature. Temperature dependence of PL spectra indicates that the 0.86 eV band has an origin distinct from that of the 0.885 eV line observed at liquid helium temperature. Spectral shape analysis using the curve-fitting technique indicates that at least two different electronic levels are formed by oxygen precipitation during annealing. The peak energy position and half-width of the 0.86 eV band were different from those of a similar 0.86 eV band resulting from two-step annealing at 450°C and subsequently at 650°C. The difference in the spectral shape is ascribed to the structural change of oxygen aggregates. We believe that PL at room temperature is sensitive to the morphology of these aggregates. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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