| Autor: |
Takeshi Kanashima, Takeshi Kanashima, Yoshiaki Kurioka, Yoshiaki Kurioka, Takaaki Imai, Takaaki Imai, Hideaki Yamamoto, Hideaki Yamamoto, Masanori Okuyama, Masanori Okuyama |
| Zdroj: |
Japanese Journal of Applied Physics; April 1997, Vol. 36 Issue: 4 p2460-2460, 1p |
| Abstrakt: |
Effects of F2treatment on the Si(100) surface have been characterized using infrared reflection absorption spectroscopy (IR-RAS). Hydrogen desorbs first from Si-H, and desorption from Si-H2and Si-H3follows subsequently, when the n-Si(100) wafer terminated by Si-H, Si-H2and Si-H3is exposed to F2gas. Moreover, the hydrogen of Si-H2desorbs faster on a terrace than on an edge. Finally, the Si(100) surface is covered by Si-F and Si-F2. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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