| Autor: |
Yoshitaka Kasukabe, Yoshitaka Kasukabe, Atsuyuki Ito, Atsuyuki Ito, Shinji Nagata, Shinji Nagata, Mokuyoshi Kishimoto, Mokuyoshi Kishimoto, Yutaka Fujino, Yutaka Fujino, Sadae Yamaguchi, Sadae Yamaguchi, Yukio Yamada, Yukio Yamada |
| Zdroj: |
Japanese Journal of Applied Physics; April 1997, Vol. 36 Issue: 4 p2323-2323, 1p |
| Abstrakt: |
The epitaxial growth of titanium nitride (TiN) films, formed by implanting nitrogen ions (N2+) with 62 keV into 100-nm-thick Ti films grown on NaCl substrates held at 250°C, has been studied mainly by transmission electron microscopy. It has been revealed that (001)-oriented TiNyis epitaxially grown by N-implantation into the as-grown (03·5)-oriented hcp-Ti. The nitriding mechanism of epitaxial Ti thin films is discussed. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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