| Autor: |
Toda, Fumihiko, Yamada, Tomoyuki, Katsufumi Hashimoto, Katsufumi Hashimoto, Hitoshi Abe, Hitoshi Abe |
| Zdroj: |
Japanese Journal of Applied Physics; March 1997, Vol. 36 Issue: 3 p1990-1990, 1p |
| Abstrakt: |
A three terminal device with the Al/Al2O3/(Ba, Rb)BiO3/Nb-doped SrTiO3structure was fabricated using a superconducting base layer. The stable interface between (Ba, Rb)BiO3and the artificial oxide barrier was obtained using in situAl2O3deposition. The output characteristics were measured as functions of input current. A current gain greater than 2 was obtained in the common emitter configuration. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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