| Autor: |
Ogata, Tamotsu, Kobayashi, Kiyoteru, Watanabe, Hajime, Kurokawa, Hiroshi, Yasuji Matsui, Yasuji Matsui, Makoto Hirayama, Makoto Hirayama |
| Zdroj: |
Japanese Journal of Applied Physics; March 1997, Vol. 36 Issue: 3 p1360-1360, 1p |
| Abstrakt: |
We have developed and evaluated chemical vapor deposition (CVD) SiO2films formed in a hydrogen-free system in which tetrachlorosilane ( SiCl4; TCS) and nitrous oxide ( N2O) are used as low pressure CVD source gases. It has been found that the hot-carrier degradation, the constant current time-dependent dielectric breakdown (TDDB) and the charge-trapping characteristics are superior to those of conventional CVD SiO2films formed from dichlorosilane ( SiH2Cl2; DCS) and N2O. We have concluded that TCS-SiO2is appropriate for CVD stacked gate oxide films due to its low electron trap density and high reliability. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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