| Autor: |
Shinjiro Kimura, Shinjiro Kimura, Tetsuya Ito, Tetsuya Ito, Masato Tabakomori, Masato Tabakomori, Yoshinaga Okamoto, Yoshinaga Okamoto, Hideaki Ikoma, Hideaki Ikoma |
| Zdroj: |
Japanese Journal of Applied Physics; March 1997, Vol. 36 Issue: 3 pL316-L316, 1p |
| Abstrakt: |
Si was oxynitrided with helicon-wave excited \Nii and Ar mixed plasma. The flow-rate ratio (\Nii :Ar) was kept constant (8:2). Oxynitridations were performed in two growth geometries in which plasma was either concentrated on the substrate or diverged from the substrate using permanent magnets. In the case of plasma concentration, relatively uniform Si oxynitride (probably \Sii \Nii O) was formed throughout the entire depth of the film. In the case of plasma divergence, however, only Si oxide was grown. Therefore, the presence of nitrogen ions is concluded to be essential for oxynitridation of Si. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
