| Autor: |
Tamio Shimatani, Tamio Shimatani, Sergey Pidin, Sergey Pidin, Mitsumasa Koyanagi, Mitsumasa Koyanagi |
| Zdroj: |
Japanese Journal of Applied Physics; March 1997, Vol. 36 Issue: 3 p1659-1659, 1p |
| Abstrakt: |
In an ultrasmall device with a channel length of 0.01 µm, only one impurity atom on the average exists in the channel region even though the impurity concentration is higher than 5.0×1018cm-3. Therefore, the device characteristics significantly change from device to device within a wafer, or even within a chip, due to the statistical variation of the impurity concentration. We investigated the influences of isolated atoms in the channel region on the device characteristics based on a Monte Carlo simulation and propose a new 0.01 µm silicon-on-insulator metal oxide semiconductor field-effect transistor (SOI MOSFET) with undoped channel to suppress the influences of statistical variation and the short channel effect. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
