| Autor: |
Katayama, Takuma, Sugiyama, Masataka, Masaru Shimizu, Masaru Shimizu, Tadashi Shiosaki, Tadashi Shiosaki |
| Zdroj: |
Japanese Journal of Applied Physics; September 1992, Vol. 31 Issue: 9 p3005-3005, 1p |
| Abstrakt: |
Pb(Zr, Ti)O3thin films were grown by photoenhanced chemical vapor deposition (CVD) using Pb(C2H5)4, Zr(O-t-C4H9)4, Ti(O-i-C3H7)4and O2. Two types of perovskite Pb(Zr, Ti)O3films (tetragonal films and rhombohedral films) were successfully obtained at 600-635°C by controlling the carrier flow ratio of the Zr source to Ti source. The Zr/Ti flow ratio also affected the growth rate, composition and electrical properties of films. In this study, it was proven that significant increases in both growth rate and Zr/Ti compositional ratio were caused by photoirradiation. Dielectric and ferroelectric properties, switching characteristics and I-Vcharacteristics of the obtained Pb(Zr, Ti)O3films were also described in detail. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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