| Autor: |
Lovell, David R., Yamamoto, Teiji, Inai, Makoto, Toshihiko Takebe, Toshihiko Takebe, Kikuo Kobayashi, Kikuo Kobayashi |
| Zdroj: |
Japanese Journal of Applied Physics; July 1992, Vol. 31 Issue: 7 pL924-L924, 1p |
| Abstrakt: |
The Schottky barrier heights of Ti/Au contacts on p-type GaAs, grown on (111)A and (100) GaAs substrates by molecular beam epitaxy, have been investigated by I-V and C-V techniques. Higher barrier heights are observed for contacts on (111)A GaAs films. Comparison between our results and the ideal Schottky barrier height for Ti on p-type GaAs shows that Ti/Au barrier heights on p-type (111)A GaAs films are closer to the ideal case than the Ti/Au barrier heights on p-type (100) GaAs films. This suggests that the defect densities of the Ti-GaAs interfaces of Ti/Au contacts on (111)A GaAs films are lower than those of identical Ti/Au contacts on (100) GaAs films. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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