| Autor: |
Xiuying, Gong, Okitsu, Kazuhiko, Hayakawa, Yasuhiro, Tomuo Yamaguchi, Tomuo Yamaguchi, Masashi Kumagawa, Masashi Kumagawa |
| Zdroj: |
Japanese Journal of Applied Physics; April 1992, Vol. 31 Issue: 4 p1016-1016, 1p |
| Abstrakt: |
The dependence of the energy band-gap on In atomic fraction for the liquid phase epitaxy (LPE) GaInSb/GaSb multigrading layers has been investigated by infrared transmission measurements combined with electroprobe microanalysis (EPMA). The result showed that epilayers with cut-off wavelength up to 4.71 µm at room temperature and with In atomic fraction as high as 0.75 have been obtained for the first time. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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