| Autor: |
Dutta, Joydeep, Hasezaki, Kazuhiro, Mashima, Satoshi, McElheny, Peter J., Suzuki, Atsushi, Gautam Ganguly, Gautam Ganguly, Akihisa Matsuda, Akihisa Matsuda |
| Zdroj: |
Japanese Journal of Applied Physics; March 1992, Vol. 31 Issue: 3 pL299-L299, 1p |
| Abstrakt: |
The contribution of ion bombardment to the growth of hydrogenated amorphous silicon prepared by plasma-enhanced chemical vapour deposition from silane and xenon-diluted silane source gases was studied by applying an external d.c. voltage to the substrate electrode. The role played by the xenon ions in the growth of the materials prepared from xenon-diluted silane source gas has been considered. It is demonstrated that the xenon ions are responsible for the growth of the materials showing stable photoconductivity behaviour under light illumination. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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