| Autor: |
Sekiguchi, Youichi, Kuwahara, Tohru, Fumihiko Kobayashi, Fumihiko Kobayashi, Shinji Iio, Shinji Iio |
| Zdroj: |
Japanese Journal of Applied Physics; February 1992, Vol. 31 Issue: 2 pL180-L180, 1p |
| Abstrakt: |
A high-speed, high-sensitivity GaAs Schottky barrier photodiode grown by chemical-beam epitaxy (CBE) has been designed, fabricated, and characterized. Antireflection coatings utilizing Si and SiO2films were optimally used to minimize reflection loss, thereby significantly improving sensitivity of the Schottky barrier photodiode. This device has a -3 dB cutoff frequency of 34 GHz, determined by an optical heterodyne technique, an external quantum efficiency of 41% at 780 nm wavelength, and a dark current of 100 pA (VR=-2 V). |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
