| Autor: |
Bársony, István, Heideman, Jean-Luc, Middelhoek, Jos Klappe |
| Zdroj: |
Japanese Journal of Applied Physics; February 1991, Vol. 30 Issue: 2 p418-418, 1p |
| Abstrakt: |
A novel low thermal budget post-implantation annealing technique, the transient RTA (T-RTA) is proposed for low-dose high-energy P-implanted silicon wafers. Results with this short time (teff=300 ms) annealing on 3''substrates proved to be superior to conventional furnace anneal performance. Spreading Resistance carrier profiling and High Resolution X-ray Diffraction measurements indicated full dopant activation, minimum profile motion and complete damage removal. According to minority carrier lifetime profiling results, generation rates below 0.3 mA/cm3could be achieved in the region of interest for device applications. Inhomogeneity of the sheet resistivity due to transient temperature gradients across the wafer remained below 2%, which is comparable or lower than those of furnace annealed samples. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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