| Autor: |
Iga, Ryuzo, Hideo Sugiura, Hideo Sugiura, Takeshi Yamada, Takeshi Yamada |
| Zdroj: |
Japanese Journal of Applied Physics; January 1991, Vol. 30 Issue: 1 pL4-L4, 1p |
| Abstrakt: |
Selective growth of InGaAs by Ar-ion-laser-assisted metalorganic molecular beam epitaxy is studied. Laser irradiation enhances the InGaAs growth rate at substrate temperatures below 500°C, but suppresses it above 530°C. It is found that the variation in the InGaAs growth rate due to laser irradiation is attributed to the variation in the GaAs growth rate in the InGaAs film. The cross-sectional profile of the area where the growth rate suppression occurs is concave with steep sidewalls and a flat bottom, while that of the area where the growth rate enhancement occurs is Gaussian-like. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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