| Autor: |
Munakata, Chusuke, Honma, Noriaki |
| Zdroj: |
Japanese Journal of Applied Physics; October 1987, Vol. 26 Issue: 10 p1663-1663, 1p |
| Abstrakt: |
Surface photovoltages (SPVs) excited with a chopped 632.8 nm-wavelength photon beam (PB) were measured with a transparent electrode that covered half of a sample wafer 76 mm in diameter. The PB diameter was kept at 120 µm and the PB power at 1 µW. Since the wafer resistivity was 0.29 ?m, the wafer surface was considered to be strongly inverted after forming a dry oxide layer 280 nm thick. SPVs were observed by changing the PB-irradiating positions so that the beam both did and did not pass through the transparent electrode. When the PB-chopping frequency was as low as 2 Hz, the SPV appeared across the entire wafer surface. However, the SPV-generating area decreased around the PB-irradiated point as the frequency became high. This can be explained by a distributed resistance and capacitance network model, previously reported by others. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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