| Autor: |
Chayahara, Akiyoshi, Masuda, Atsuhiko, Imura, Takeshi, Osaka, Yukio |
| Zdroj: |
Japanese Journal of Applied Physics; June 1986, Vol. 25 Issue: 7 pL564-L564, 1p |
| Abstrakt: |
Crystalline films of SiC were formed using CVD method in electron cyclotron resonance plasma, generated by microwave (2.45 GHz) discharge in mixed gas of silane, methane, and hydrogen under the magnetic field. Depositionrate was ?4 A/s and film composition C/Si=1.1. The largest grain size is at least 800 A which is estimated from X-ray diffraction measurements. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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