| Autor: |
Narusawa, Tadashi, Kobayashi, Keisuke L. I., Nakashima, Hisao |
| Zdroj: |
Japanese Journal of Applied Physics; January 1985, Vol. 24 Issue: 2 pL98-L98, 1p |
| Abstrakt: |
We have applied the MeV He+ion channeling technique to study the atomic structure of MBE-grown GaAs(001) surfaces. The inherent sensitivity of our technique to small displacements of surface atoms shows that the As-stabilized GaAs(001)-c(4×4) surface structure contains significant lateral displacements of the first layer As atoms, which are associated with subsurface strain extending down to at least the 4th atomic layer. In contrast, the hydrogen-saturated (1×1) surface has a bulk-like atomic structure. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
