| Autor: |
Watanabe, Miyoko Oku, Morizuka, Kouhei, Mashita, Masao, Ashizawa, Yasuo, Zohta, Yasuhito |
| Zdroj: |
Japanese Journal of Applied Physics; February 1984, Vol. 23 Issue: 2 pL103-L103, 1p |
| Abstrakt: |
Donor levels of MBE-grown Si-doped AlxGa1-xAs have been characterized by a combination of the C-V method and capacitance and current transient spectroscopy. Although most electrons are supplied by so-called DX centers in the AlAs mole fraction (x) range of 0.3?0.7 in this material, it is found that a small amount of shallow donors are still present. The concentrations of the DX center and the shallow donor are determined in detail as a function of AlAs mole fraction and Si doping level. The activation energy obtained by the Hall effect measurement is discussed in association with these data. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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