| Autor: |
Sorimachi, Yoshio, Ishiwara, Hiroshi, Yamamoto, Hiroshi, Furukawa, Seijiro |
| Zdroj: |
Japanese Journal of Applied Physics; May 1982, Vol. 21 Issue: 5 p752-752, 1p |
| Abstrakt: |
The changes in the electrical and structural properties of metal-silicide films caused by ion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi2, NiSi2and Pd2Si grown on Si (111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800°C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi2, NiSi2and Pd2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1×1016Ar-ions/cm2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd2Si to PdSi was also observed in the high-temperature annealing of the implanted Pd2Si films. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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