| Autor: |
Ohura, Jun-ichi, Takeishi, Yoshiyuki |
| Zdroj: |
Japanese Journal of Applied Physics; May 1970, Vol. 9 Issue: 5 p458-458, 1p |
| Abstrakt: |
Experimental studies are reported concerning surface states and current transport properties of the Schottky barrier diodes prepared by evaporation of various metals under high vacuum on chemically etched n-type GaAs (111) surfaces. Surface state density, determined from a relation of the barrier height and vacuum work function of metals, amounts to 7×1013cm-2eV-1and the effective thickness of interfacial layer is estimated to be 3?8 Å from an analysis of various diode characteristics. Density distribution of the surface states in the lower half of the band gap is derived. Dependences of current-voltage characteristics on donor concentration in the range 2×1015to 5×1017cm-3and on temperature, 4.2 to 400°K, are accounted for in terms of thermionic-field emission and field emission theories. Effects of deep-lying donors on reverse characteristics and others are discussed. Changes in barrier properties by heat treatment at temperatures up to 400°C are presented. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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