| Autor: |
Okimura, Hiroshi, Kondo, Ryuji |
| Zdroj: |
Japanese Journal of Applied Physics; March 1970, Vol. 9 Issue: 3 p274-274, 1p |
| Abstrakt: |
CdS-p·Si and CdS-n·Si junctions are prepared by vacuum evaporation of CdS on Si crystals, and their electrical and photovoltaic properties are studied. The junction prepared on hot Si substrate (substrate temperature; 150°-250°C) has properties of hetero-junction, while the one on cold substrate (50°-80°C) shows properties resembling those of Schottky barrier. CdS-p·Si junctions are generally superior to CdS-n·Si junctions in rectifying properties. CdS-p·Si cell on cold substrate shows excellent photovoltaic effect which is comparable to that of Si solar cell. The maximum solar conversion efficiency of CdS-p·Si cells is about 5.5%. Here, the CdS layer is supposed to act as a semi-transparent electrode. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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