| Autor: |
Ohta, Tuneaki, Kobayashi, Keisuke L. I., Nakashima, Hisao |
| Zdroj: |
Japanese Journal of Applied Physics; January 1986, Vol. 25 Issue: 1 p59-59, 1p |
| Abstrakt: |
The spectral and spatial behaviors of the photoluminescence (PL) have been studied in GaAs-AlGaAs multiquantum well (MQW) structures grown by molecular-beam epitaxy at various substrate temperatures. The results indicate that the optimum substrate temperature is in the region of 660-700°C, where the PL intensity is a factor of 100 greater than that at lower temperatures. Interface disorder is observed by PL topography in a sample grown at temperatures higher than 750°C. This disorder is considered to degrade the PL intensities of samples grown above 750°C. The PL topographic observations show that dislocations and oval defects act as nonradiative centers and develop to dark-line defects under high optical excitation in MQW, as in conventional double heterostructures. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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