Binding Energies of the Electron in GaAs-Ga1-xAlxAs Quantum Well Under Perpendicular Magnetic Field

Autor: Shen, Zhongjun, Zhang, Shu-An, Gu, Shiwei
Zdroj: Communications in Theoretical Physics; September 1991, Vol. 16 Issue: 2 p233-236, 4p
Abstrakt: We have calculated the binding energies of the ground state of hydrogenic donor in GaAs-Ga1-xAlxAs quantum well of finite barrier height in the presence of a magnetic field, which is taken to be parallel to the axis of growth of the quantum-well structure. We have used the strong-perturbation theory and the perturbative-variational approach. Our results are given as a function of the size of the quantum well.
Databáze: Supplemental Index