Facile one-pot synthesis of defect-engineered step-scheme WO3/g-C3N4heterojunctions for efficient photocatalytic hydrogen productionElectronic supplementary information (ESI) available: XPS survey spectra of g-C3N4and nWCN; XPS spectra of C 1s and N 1s; transient photocurrent responses, EIS Nyquist plots and photoluminescence emission spectra of 15.0 W + CN and 15.0WCN; BET surface area and pore structure; calculation of apparent quantum efficiency; percentage of different W and O species; Tauc equation; single and double exponential fitting equation; and equation of average fluorescence lifetime τ. See DOI: 10.1039/d0cy02478c

Autor: Du, Xiya, Song, Song, Wang, Yating, Jin, Wenfeng, Ding, Tong, Tian, Ye, Li, Xingang
Zdroj: Catalysis Science & Technology; 2021, Vol. 11 Issue: 8 p2734-2744, 11p
Abstrakt: Constructing step-scheme (S-scheme) heterojunctions is one of the efficient strategies to enhance photocatalytic processes, but unfortunately their synthesis requires complex procedures. Here, we develop a facile methodology for one-pot synthesis of defect-engineered S-scheme WO3/g-C3N4heterojunctions. The as-synthesized sample (15.0WCN) exhibits a remarkable photocatalytic hydrogen generation rate (1034 μmol h−1g−1), which is 1.7 and 4.5 times higher than that of normal S-scheme WO3/g-C3N4heterojunctions (15.0W + CN) and pure g-C3N4, respectively. We discover that surface oxygen vacancies can improve the separation efficiency of photogenerated carriers by acting as a mediator between the valence band of g-C3N4and the conduction band of WO3, while bulk oxygen vacancies mainly enhance visible light absorption through narrowing the band gap in the S-scheme system. In addition, our studies show that surface oxygen vacancies are more effective than bulk ones in S-scheme heterojunctions for photocatalytic hydrogen production. This work affords a new insight into coupling strategies of defect-engineering and S-scheme heterojunctions, which is helpful for designing other efficient photocatalytic systems.
Databáze: Supplemental Index