| Autor: |
Low, Rui Shan, Asubar, Joel T., Baratov, Ali, Kamiya, Shunsuke, Nagase, Itsuki, Urano, Shun, Kawabata, Shinsaku, Tokuda, Hirokuni, Kuzuhara, Masaaki, Nakamura, Yusui, Naito, Kenta, Motoyama, Tomohiro, Yatabe, Zenji |
| Zdroj: |
Applied Physics Express (APEX); March 2021, Vol. 14 Issue: 3 p031004-031004, 1p |
| Abstrakt: |
We report on the fabrication and characterization of AlGaN/GaN metal-insulator-semiconductor (MIS) capacitors and high-electron-mobility transistors (MIS-HEMTs) using a 5 nm thick Al2O3dielectric deposited by cost-effective and environmental-friendly mist chemical vapor deposition (mist-CVD) technique. Practically hysteresis-free capacitance-voltage profiles were obtained from the fabricated two-terminal MIS-capacitors indicating high quality of the mist-Al2O3/AlGaN interface. Compared with reference Schottky-gate HEMTs, mist MIS-HEMTs exhibited much improved performance including higher drain current on-to-off ratio, much lower gate leakage current in both forward and reverse directions and lower subthreshold swing. These results demonstrate the potential and viability of non-vacuum mist-CVD Al2O3in the development of high-performance GaN-based MIS-HEMTs. |
| Databáze: |
Supplemental Index |
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