| Autor: |
Kim, Young Mo, Park, Chulkwon, Kim, Useong, Ju, Chanjong, Char, Kookrin |
| Zdroj: |
Applied Physics Express (APEX); January 2016, Vol. 9 Issue: 1 p011201-011201, 1p |
| Abstrakt: |
Thin-film transistors have been fabricated using La-doped BaSnO3as n-type channels and (In,Sn)2O3as source, drain, and gate electrodes. HfO2was grown as gate insulators by atomic layer deposition. The field-effect mobility, Ion/Ioffratio, and subthreshold swing of the device are 24.9 cm2V?1s?1, 6.0 × 106, and 0.42 V dec?1, respectively. The interface trap density, evaluated to be higher than 1013cm?2eV?1, was found to be slightly lower than that of the thin-film transistor with an Al2O3gate insulator. We attribute the much smaller subthreshold swing values to the higher dielectric constant of HfO2. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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