| Autor: |
Li, Hongjian, Li, Panpan, Kang, Junjie, Li, Zhi, Zhang, Yiyun, Li, Zhicong, Li, Jing, Yi, Xiaoyan, Li, Jinmin, Wang, Guohong |
| Zdroj: |
Applied Physics Express (APEX); May 2013, Vol. 6 Issue: 5 p052102-052102, 1p |
| Abstrakt: |
InGaN-based green light-emitting diodes (LEDs) with low-indium-composition shallow quantum well (SQW) inserted before the InGaN emitting layer are investigated theoretically and experimentally. Numerical simulation results show an increase of the overlap of electron-hole wave functions and a reduction of electrostatic field within the active region of the SQW LED, compared to those of the conventional LED. Photoluminescence (PL) measurements exhibit reduced full width at half maximum (FWHM) and increased PL intensity for the SQW LED. A 28.9% enhancement of output power at 150 mA for SQW LED chips of 256×300 µm2size is achieved. |
| Databáze: |
Supplemental Index |
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