| Autor: |
Speer, Kevin, Satheesh, Nitesh, Kashyap, Avinash, Bontemps, Serge |
| Zdroj: |
IEEE Power Electronics Magazine; September 2020, Vol. 7 Issue: 3 p28-35, 8p |
| Abstrakt: |
Today, multiple silicon carbide (SiC) device suppliers update their growing product catalogs every few months. As options increase, the next challenge facing the widespread adoption of SiC is the design-in process. Using these fast-switching components requires a multifaceted, holistic solution involving the semiconductor die, package, gate driver, and the interactions of all three technologies. This article shows one such solution. Following a discussion of the subject SiC MOSFET's performance and ruggedness, an optimized power module package and innovative gate driver solution are described in detail. It is then shown how these three key pieces may be seamlessly integrated into a total system solution, simplifying the design process of SiC while maintaining a march toward a new paradigm in power electronics. |
| Databáze: |
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