| Autor: |
Sabitov, D.R., Ryaboshtan, Yu.L., Svetogorov, V.N., Padalitsa, A.A., Ladugin, M.A., Marmalyuk, A.A., Vasil'ev, M.G., Vasil'ev, A.M., Kostin, Yu.O., Shelyakin, A.A. |
| Zdroj: |
Quantum Electronics; September 2020, Vol. 50 Issue: 9 p830-833, 4p |
| Abstrakt: |
Superluminescent diodes based on AlGaInAs/InP separate-confinement double heterostructures with strain-compensated quantum wells are investigated. The influence of elastic strains in the active region on the output characteristics of the devices is analysed. It is shown that such a design of a superluminescent diode allows an optical power of more than 5 mW, a radiation spectrum width of more than 60 nm, a degree of output radiation polarisation up to 30 dB to be obtained at the output of a single-mode fibre, and has a great potential for further improvement. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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