| Autor: |
Suwa, Tomoyuki, Teramoto, Akinobu, Shirai, Yasuyuki, Matsuo, Takenobu, Mizutani, Nobutaka, Sugawa, Shigetoshi |
| Zdroj: |
ECS Transactions; April 2020, Vol. 97 Issue: 3 |
| Abstrakt: |
We investigated the influence of O2concentration in ultra pure water (UPW) on the Si(110) surface roughness during the immersion of Si into UPW. The suppressing of O2concentration in UPW is very effective to suppress the increase of microroughness of Si(110) surface. The O2concentration in UPW can be controlled by the ambient O2concentration. Si(110) surface cannot be roughened when the O2concentration is suppressed to less than 100 ppm in ambient (4 ppb in UPW) and the immersion time is less than 1 hour. It can be expected that the Si(110) surface flatness is maintained, and this surface is mainly used for the channel of FinFET. Furthermore, we demonstrated that the O2concentration in a prototype 200-mm single-wafer cleaning chamber can be decreased to less than 100 ppm within 1 minute by an N2purge of 200 l/min. |
| Databáze: |
Supplemental Index |
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