| Autor: |
ALEXANDROV, S. E., HITCHMAN, M. L., SHAMLIAN, S., ALEXANDROV, S. E., HITCHMAN, M. L., SHAMLIAN, S. |
| Zdroj: |
Journal de Physique IV - Proceedings; December 1993, Vol. 3 Issue: 1 pC3-233-C3-240, 2333238p |
| Abstrakt: |
The growth of silicon nitride (SiNxHy) films from SiH4and N2by capacitively coupled remote PECVD is described for the first time. The influence of process parameters on the growth rate, concentration of bonded hydrogen, and properties of deposited films is discussed. The most probable mechanism of film formation is proposed on the basis of the experimental results obtained. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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