| Autor: |
Parkin, I. P., Price, L. S., Hardy, A. M.E., Clark, R. J.H., Hibbert, T. G., Molloy, K. C., Parkin, I. P., Price, L. S., Hardy, A. M.E., Clark, R. J.H., Hibbert, T. G., Molloy, K. C. |
| Zdroj: |
Journal de Physique IV - Proceedings; September 1999, Vol. 9 Issue: 1 pPr8-403-Pr8-410, 4038403p |
| Abstrakt: |
Tin sulfide thin films have been laid down on glass substrates by APCVD of tin tetrabromide with hydrogen sulfide. The temperature of the substrate was varied over the range 250 to 600 °C. Flow rates of hydrogen sulfide into the reactor were altered from 0.6 to 1.8 dm3min-1. The films were characterised by glancing-angle X-ray diffraction, Raman microscopy, EDAX and SEM. It is evident that at substrate temperatures from 250 to 450 °C tin(IV) sulfide is deposited, whereas at temperatures in excess of 550 °C tin(II) sulfide is deposited. At intermediate temperatures mixed-valent Sn2S3is formed. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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