| Autor: |
Jones, A. C., Leedham, T. J., Brooks, J., Davies, H. O., Jones, A. C., Leedham, T. J., Brooks, J., Davies, H. O. |
| Zdroj: |
Journal de Physique IV - Proceedings; September 1999, Vol. 9 Issue: 1 pPr8-553-Pr8-560, 5538553p |
| Abstrakt: |
Thin films of metal oxides are finding an increasing application in electronic devices. They can be deposited by a number of methods, however metalorganic chemical vapour deposition (MOCVD) offers the most flexible approach. Key to the success of this technology is the manufacture and supply of suitable precursors with sufficient volatility and stability, as well as adequate purity. In this article a number of manufacturing issues are discussed, as well as the development of new precursors with improved physical properties and enhanced MOCVD performance. |
| Databáze: |
Supplemental Index |
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