| Autor: |
Bakovets, V. V., Gelfond, N. V., Mitkin, V. N., Levashova, T. M., Dolgovesova, I. P., Ratushnjak, V. T., Martynets, V. G., Bakovets, V. V., Gelfond, N. V., Mitkin, V. N., Levashova, T. M., Dolgovesova, I. P., Ratushnjak, V. T., Martynets, V. G. |
| Zdroj: |
Journal de Physique IV - Proceedings; September 2001, Vol. 11 Issue: 1 pPr3-561-Pr3-567, 5613565p |
| Abstrakt: |
Mechanism and kinetics of Ni, Cu and Y2O3thin film deposition are considered. It is shown that the decomposition temperature of chelate compounds decreases in hydrogen atmosphere. The film deposition temperature decreasing is defined by catalytic reaction of dissociative adsorption of hydrogen molecules. Then hydrogen atoms react with precursor molecules. The temperature of Y2O3film deposition from Y(III) β-diketonate reaches 500°C because the CVD process is produced in inert atmosphere. Use of H2O vapor addition to above mentioned CVD process permits to increase the precursor adsorption on the substrate surface and provides films with good electrical properties. All these principles can be used for nanostructure and superlattice formation by an adsorption CVD method. |
| Databáze: |
Supplemental Index |
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