| Autor: |
Boulliard, J. C., Capelle, B., Ferret, D., Lifchitz, A., Malgrange, C., Pétroff, J. F., Taccoen, A., Zheng, Y. L., Boulliard, J. C., Capelle, B., Ferret, D., Lifchitz, A., Malgrange, C., Pétroff, J. F., Taccoen, A., Zheng, Y. L. |
| Zdroj: |
Journal de Physique I; June 1992, Vol. 2 Issue: 6 p1215-1232, 18p |
| Abstrakt: |
The structure of an iron film, deposited at low temperature (50 °C) upon a silicon (111) substrate, has been determined by means of X-ray Standing Wave experiments performed at LURE (Orsay, France). Experimental results are coherent with the model of an abrupt interface between the adsorbate and the surface : the first site of adsorption terminates the bulk silicon and a body-centred iron layer epitaxially grows on the substrate with a preferential growth orientation. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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