FEOL dry etch process challenges of ultimate FinFET scaling and next generation device architectures beyond N3
Autor: | Wise, Richard S., Labelle, Catherine B., Tao, Z., Zhang, L., Dupuy, E., Chan, B. T., Altamirano-Sanchez, E., Lazzarino, F. |
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Zdroj: | Proceedings of SPIE; March 2020, Vol. 11329 Issue: 1 p113290O-113290O-7, 1019618p |
Databáze: | Supplemental Index |
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