FEOL dry etch process challenges of ultimate FinFET scaling and next generation device architectures beyond N3

Autor: Wise, Richard S., Labelle, Catherine B., Tao, Z., Zhang, L., Dupuy, E., Chan, B. T., Altamirano-Sanchez, E., Lazzarino, F.
Zdroj: Proceedings of SPIE; March 2020, Vol. 11329 Issue: 1 p113290O-113290O-7, 1019618p
Databáze: Supplemental Index