| Autor: |
Islam, Karimul, Sultana, Rezwana, Rakshit, Abhishek, Goutam, U. K., Chakraborty, Supratic |
| Zdroj: |
SN Applied Sciences; April 2020, Vol. 2 Issue: 4 |
| Abstrakt: |
The reactively sputtered Nb2O5-based metal–oxide–semiconductor devices deposited under different O2/Arratios have been studied using laboratory-based X-ray reflectivity (XRR) and synchrotron-based X-ray photoelectron spectroscopy techniques. The I-Vcharacteristics reveal a sharp transition in the magnitude of current (∼up to five orders) signifying a switching phenomenon between high-resistance and low-resistance states. The electron density profile, derived from XRR data, shows a dependence of the switching properties on the film porosity. Further, the non-lattice oxygen in the film also plays a role in determining the on/off ratio of the devices. Therefore, besides the presence of non-lattice oxygen, film porosity also influences the resistive switching behavior of the Nb2O5-based devices. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
Full text from SpringerLink