?C?2?F?6?/??O?2 and ?C?3?F?8?/??O?2 Plasmas SiO2 Etch Rates, Impedance Analysis, and Discharge Emissions

Autor: Entley, William R., Hennessy, William J., Langan, John G.
Zdroj: Electrochemical and Solid State Letters; February 2000, Vol. 3 Issue: 2 p99-102, 4p
Abstrakt: We have investigated the feed gas compositions that result in the fastest etch rates of in and based plasmas and have independently measured the radio-frequency electrical characteristics and optical emission spectra of the plasmas. Gas phase Fourier transform infrared spectroscopy was used to quantify the perfluorocompound (PFC) emissions. Under optimal operating conditions the based discharges exhibited significantly faster etch rates than the based discharges. At the gas compositions that resulted in the fastest etch rates the greatest atom densities, the most inductive phase angles, and the highest discharge impedance magnitudes were observed. Higher oxygen feed gas concentrations resulted in higher utilization efficiencies and smaller quantities of plasma generated . For identical feed gas compositions based discharges produced on average 50% less plasma generated than based discharges. (c)2000 The Electrochemical Society
Databáze: Supplemental Index