| Autor: |
Lim, Jaesoon, Cho, Kyuho, Kim, Kichul, Yoo, Chayoung, Kim, Tae, Chung, Uin, Moon, Jootae |
| Zdroj: |
ECS Transactions; July 2006, Vol. 1 Issue: 5 p153-158, 6p |
| Abstrakt: |
Zr-TiO2 thin films were prepared by the atomic layer deposition using Zr(OtBu)4 and Ti(OtBu)4 cocktail sources. 8- inch Ru/SiO2/Si wafers were used for the substrates. It was found that the composition ratio of Zr and Ti in Zr-TiO2 films was similar to the mixing ratio of the precursors. The dielectric constant of as deposited Zr-TiO2 film was 35, which was 1.5 times higher than that of ZrO2. In addition, the leakage currents of Zr-TiO2 film was several orders lower than those of TiO2. The leakage currents of 100 Aa Zr-TiO2 films were less than 100nA/cm2 at 1.0 V, which satisfied the requirements for the DRAM capacitor |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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