Autor: |
Granneman, Ernst H., Terhorst, Herbert, Falepin, Annelies, Rosseel, Erik, Verheyden, Kurt, Vanormelingen, Koen, Bourdon, Helene, Halimaoui, Aomar, Funk, Klaus |
Zdroj: |
ECS Transactions; October 2006, Vol. 3 Issue: 2 p85-96, 12p |
Abstrakt: |
The effect of 3D patterns on the heating of silicon substrates was investigated theoretically and experimentally. As energy sources RTA systems based on radiant heating (i.e. lamp-based) and on conduction heating (wafer placed in very close proximity to hot surfaces) were applied. The 3D patterns were trenches with dimensions 150-450nm wide, and 400nm deep. In case of lamp- based systems with heat-up rates of 75{degree sign}C/s within- die temperature variations of 10-20{degree sign}C were observed. In case of conduction-based systems with heat-up rates up to 900{degree sign}C/s the impact of the 3D structures was negligible. Both types of systems were modeled, and a reasonable correlation with the experimental data was found. |
Databáze: |
Supplemental Index |
Externí odkaz: |
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