| Autor: |
Fossard, Frederic, Halbwax, Mathieu, Yam, Vy, Lam, Huu, Mathet, Veronique, Cammilleri, Davide, Debarre, Dominique, Boulmer, Jacques, Bouchier, Daniel |
| Zdroj: |
ECS Transactions; October 2006, Vol. 3 Issue: 7 p593-598, 6p |
| Abstrakt: |
Relaxed germanium was deposited following a low temperature-high temperature procedure by ultrahigh vacuum chemical vapor deposition in Si trenches opened through a SiO2 mask. The resulting growth is selective, the germanium fills the Si trenches and evolves towards a roof-shaped morphology limited by (001), {113} and {111} facets. The evolution in height of the Ge structure depends on the trench width, and can be understood by considering a growth rate in the <113> direction equal to 22% of that measured along the <001> axis. At last, a surprisingly strong Ge diffusion under the SiO2 mask was revealed by selective chemical etching. Such a phenomenon was unexpected because no diffusion through the Si/Ge interface was previously observed on plain wafer. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
