| Autor: |
Shenai, Deo, DiCarlo, Ron, Power, Mike, Amamchyan, Art, Goyette, Randy, Woelk, Egbert, Sagnes, Isabel |
| Zdroj: |
ECS Transactions; October 2006, Vol. 3 Issue: 7 p867-873, 7p |
| Abstrakt: |
Today, one of the major limitations impacting the commercialization of SiGe technology is the lack of a commercially viable and safer process that eliminates hazards associated with GeH4 and higher thermal budget associated with GeCl4. The key to growing successful SiGe structures is thus a strategic deposition process that (a) employs safer germanium sources, and (b) offers a wide growth temperature window without degrading the film properties and jeopardizing the environment, health and safety (EHS) aspects of overall operation. In this paper, we report on the development of novel germanium precursors along with the first successful use of an enabling germanium precursor, isobutyl germane (IBGe) for the growth of high purity Ge and SiGe films. We also elucidate our strategy to identify the most appropriate candidates from a large number of promising organogermanium compounds along with initial results on SiGe films and high quality epitaxial Ge films deposited using IBGe. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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