| Autor: |
Chantre, Alain, Avenier, Gregory, Boissonnet, Laurence, Borot, Gael, Bouillon, Pierre, Brossard, Florence, Chevalier, Pascal, Deleglise, Florence, Dutartre, Didier, Duvernay, Julien, Fregonese, Sebastien, Judong, Fabienne, Pantel, Roland, Perrotin, Andre, Rauber, Bruno, Rubaldo, Laurent, Saguin, Fabienne, Schwartzmann, Thierry, Vandelle, Benoit, Zimmer, Thomas |
| Zdroj: |
ECS Transactions; October 2006, Vol. 3 Issue: 7 p355-363, 9p |
| Abstrakt: |
This paper reviews the concept, manufacturing process and electrical characteristics of a novel self-aligned SiGeC HBT structure suitable for thin-film SOI substrates. It then describes the integration of this device into 130nm SOI CMOS technology, and presents early results on the development of a complementary pnp HBT. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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