| Autor: |
Terzieva, Valentina, Caymax, Matty R., Souriau, Laurent, Meuris, Marc M., Clemente, Francesca, Benedetti, Alessandro |
| Zdroj: |
ECS Transactions; October 2006, Vol. 3 Issue: 7 p1023-1031, 9p |
| Abstrakt: |
Ultra-thin SiGe films on insulator with high Ge fraction were fabricated through Ge condensation. To achieve that strained Si0.75Ge0.25 layers were grown epitaxially on SOI wafers and oxidized in O2 at 1150oC for various times. Raman measurements and X-TEM revealed the importance of purity of oxidation ambient for the oxidation process. Traces of moisture in the oxygen flux accelerate the process causing a switch from dry to wet oxidation mechanism, leading to complete oxidation of the starting layer in only 1 hour. The crystal quality and overall uniformity of such layers however is poor. The use of 100% dry oxygen provides the necessary control over the oxidation process. This allowed relaxed SiGe layers with concentration of Ge up to 45% and higher to be obtained. X-TEM indicated good crystalline quality and uniform layers with no threading dislocations or other defects introduced during oxidation. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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