| Autor: |
Sioncke, Sonja, Simoen, Eddy R., Janssens, Tom, Meuris, Marc M., Mertens, Paul W., Forment, Stefaan, Clauws, Paul, Theuwis, Antoon |
| Zdroj: |
ECS Transactions; October 2006, Vol. 3 Issue: 7 p1109-1119, 11p |
| Abstrakt: |
In this paper, we report the results of a study aimed at assessing the influence of Hf and Ni contamination on the electrical properties of Ge. Hf and Ni were implanted in n-type Ge wafers that were subsequently annealed and characterized by several techniques (SIMS, ToFSIMS, TEM, DLTS, MCLT). It is shown that the minority carrier lifetime is drastically reduced by Ni contamination. Also, the presence of Hf introduces deep levels. However, we cannot assign the reduction in minority carrier lifetime unambiguously to the Hf contamination due to contamination issues during the annealing step. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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